Frequency and breakdown properties of AlGaN/GaN HEMTs

被引：0

作者：

Vertiatchikh, A ^{[1
]}

Schaff, WJ ^{[1
]}

Eastman, LF ^{[1
]}

Matulionis, A ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

2003 INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS: POST-CONFERENCE PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/ISCSPC.2003.1354444

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN heterostructure transistors show potential in high-frequency high-power applications because of their high breakdown voltages and high electron saturation velocities. The operating drain voltage, limiting the maximum RF output power, should be lower than breakdown voltage of the device. The frequency and breakdown properties of the AlGaN/GaN heterostructure transistors have been studied.

引用

页码：132 / 137

页数：6

共 50 条

[1] Breakdown mechanisms in AlGaN/GaN HEMTs: An overview
Meneghesso, Gaudenzio
Meneghini, Matteo
Zanoni, Enrico
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (10)
[2] Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs
Yin, Yulian
Liu, Xiaoyu
Tang, Xi
Xie, Xuan
Wang, Huan
Zhao, Changhui
Yang, Shu
[J]. Applied Physics Letters, 2024, 125 (17)
[3] On the Onset of Breakdown of the Virtual Gate in AlGaN/GaN HEMTs
Gupta, Shradha
Kaushik, Janesh K.
Gupta, Ankur
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (07) : 3623 - 3629
[4] Low frequency noise in ion implanted GaN/AlGaN/GaN and AlGaN/GaN HEMTs
Nakajima, M.
Ohsawa, T.
Hishiya, M.
Nomoto, K.
Nakamura, T.
[J]. REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, PROCEEDINGS, 2008, (26): : 79 - 82
[5] Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage
Ma Juncai
Zhang Jincheng
Xue Junshuai
Lin Zhiyu
Liu Ziyang
Xue Xiaoyong
Ma Xiaohua
Hao Yue
[J]. JOURNAL OF SEMICONDUCTORS, 2012, 33 (01)
[6] Study on off-state breakdown in AlGaN/GaN HEMTs
Nakao, T
Ohno, Y
Kishimoto, S
Maezawa, K
Mizutani, T
[J]. 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2335 - 2338
[7] Effect of deep trap on breakdown voltage in AlGaN/GaN HEMTs
Nakajima, Akira
Yagi, Shuichi
Shimizu, Mitsuaki
Okumura, Hajime
[J]. SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1345 - 1348
[8] Breakdown voltage analysis for the new RESURF AlGaN/GaN HEMTs
BaoXing Duan
YinTang Yang
[J]. Science China Information Sciences, 2012, 55 : 473 - 479
[9] Breakdown voltage analysis for the new RESURF AlGaN/GaN HEMTs
Duan BaoXing
Yang YinTang
[J]. SCIENCE CHINA-INFORMATION SCIENCES, 2012, 55 (02) : 473 - 479
[10] Breakdown voltage analysis for the new RESURF AlGaN/GaN HEMTs
DUAN BaoXing & YANG YinTang Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices
[J]. Science China(Information Sciences), 2012, 55 (02) : 473 - 479

← 1 2 3 4 5 →