VCSEL driver with synthesis of 25-Gb/s PAM-4 signal in 90-nm CMOS technology

被引：1

作者：

Jou, Jau-Ji ^{[1
]}

Shih, Tien-Tsorng ^{[1
]}

Wu, Tsung-Yen ^{[1
]}

机构：

[1] Natl Kaohsiung Univ Sci & Technol, Dept Elect Engn, Kaohsiung, Taiwan

来源：

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2023年 / 114卷 / 03期

关键词：

Laser diode driver (LDD); Vertical-cavity surface-emitting laser (VCSEL); Four-level pulse amplitude modulation (PAM-4); Complementary metal-oxide-semiconductor (CMOS); 0.13; MU-M; TRANSIMPEDANCE AMPLIFIER; GB/S; REACH;

D O I：

10.1007/s10470-022-02111-1

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this study, a high-speed four-level pulse amplitude modulation (PAM-4) vertical-cavity surface-emitting laser (VCSEL) diode driver circuit is implemented in Taiwan Semiconductor Manufacturing Company 90-nm complementary metal-oxide-semiconductor technology. The laser diode driver (LDD) can input directly two non-return-to-zero signals to synthesize a PAM-4 current signal. In the LDD, the broadband techniques, including a de-emphasis technique, an equalizer, and a negative capacitor are used to enhance the circuit bandwidth. Through the eye diagram measurements, the performance of the PAM-4 VCSEL LDD chip on a printed circuit board is verified to be suitable in 25-Gb/s optical transmitters for short-reach transmissions.

引用

页码：379 / 386

页数：8

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