VCSEL driver with synthesis of 25-Gb/s PAM-4 signal in 90-nm CMOS technology

被引：1
|
作者：
Jou, Jau-Ji [1 ]
Shih, Tien-Tsorng [1 ]
Wu, Tsung-Yen [1 ]
机构：
[1] Natl Kaohsiung Univ Sci & Technol, Dept Elect Engn, Kaohsiung, Taiwan
来源：
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2023年 / 114卷 / 03期
关键词：
Laser diode driver (LDD); Vertical-cavity surface-emitting laser (VCSEL); Four-level pulse amplitude modulation (PAM-4); Complementary metal-oxide-semiconductor (CMOS); 0.13; MU-M; TRANSIMPEDANCE AMPLIFIER; GB/S; REACH;
D O I：
10.1007/s10470-022-02111-1
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this study, a high-speed four-level pulse amplitude modulation (PAM-4) vertical-cavity surface-emitting laser (VCSEL) diode driver circuit is implemented in Taiwan Semiconductor Manufacturing Company 90-nm complementary metal-oxide-semiconductor technology. The laser diode driver (LDD) can input directly two non-return-to-zero signals to synthesize a PAM-4 current signal. In the LDD, the broadband techniques, including a de-emphasis technique, an equalizer, and a negative capacitor are used to enhance the circuit bandwidth. Through the eye diagram measurements, the performance of the PAM-4 VCSEL LDD chip on a printed circuit board is verified to be suitable in 25-Gb/s optical transmitters for short-reach transmissions.
引用
收藏
页码：379 / 386
页数：8
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