Bipolar Photoresponse in p-n Heterojunction for Spectrally Distinctive Photodetection

被引：0
|
作者：
Chen, Wei [1 ]
Wang, Danhao [2 ]
Luo, Dongyang [1 ]
Kang, Yang [1 ]
Fang, Shi [1 ]
Sun, Haiding [1 ]
机构：
[1] Univ Sci & Technol China, Sch Microelect, Hefei 230000, Peoples R China
[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
来源：
2023 IEEE PHOTONICS CONFERENCE, IPC | 2023年
关键词：
GaN nanowires; p-n junction; photoelectrochemical photodetectors; dual-polarity photocurrent;
D O I：
10.1109/IPC57732.2023.10360647
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We constructed a bipolar photoresponse photodetector based on Pt nanoparticle-modified p-AlGaN/n-GaN nanowires p-n heterojunctions. The bidirectional photocurrent phenomenon was observed in the semiconductor p-n heterojunction under 254 nm and 365 nm irradiation, overcoming the limitation of the unidirectional photocurrent of conventional p-n junctions.
引用
收藏
页数：2
相关论文
共 50 条
  • [41] Photoresponse characteristics of n-ZnO/p-Si heterojunction photodiodes
    Choi, YS
    Lee, JY
    Im, S
    Lee, SJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06): : 2384 - 2387
  • [42] ULTRAFAST PHOTODETECTION WITH AN ALINAS/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTOR
    CARRUTHERS, TF
    FRANKEL, MY
    KYONO, CS
    APPLIED PHYSICS LETTERS, 1993, 63 (14) : 1921 - 1923
  • [43] DEEP LEVELS AT P-N AND N-P ALGAAS-GAAS HETEROJUNCTION INTERFACES
    RYS, A
    BURROWS, ILC
    PORTNOY, WM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) : 500 - 505
  • [44] InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor
    Chang, PC
    Baca, AG
    Li, NY
    Sharps, PR
    Hou, HQ
    Laroche, JR
    Ren, F
    APPLIED PHYSICS LETTERS, 2000, 76 (19) : 2788 - 2790
  • [45] EXCESS SURFACE CURRENTS IN P-N JUNCTIONS AND BIPOLAR TRANSISTORS
    ESTEVE, D
    MARTINOT, H
    SOLID-STATE ELECTRONICS, 1971, 14 (08) : 693 - &
  • [46] RELATIONSHIP BETWEEN THE LUMINESCENCE AND PHOTORESPONSE SPECTRA OF GAP-BI P-N STRUCTURES
    KUZNETSOV, VV
    PIKHTIN, AN
    POPOV, VA
    RAZBEGAEV, VN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (05): : 572 - 573
  • [47] Single-Crystalline Perovskite p-n Junction Nanowire Arrays for Ultrasensitive Photodetection
    Guan, Yuwei
    Zhang, Chunhuan
    Liu, Zhen
    Zhao, Yiman
    Ren, Ang
    Liang, Jie
    Hu, Fengqin
    Zhao, Yong Sheng
    ADVANCED MATERIALS, 2022, 34 (35)
  • [48] Thermal stability of boron nitride/silicon p-n heterojunction diodes
    Teii, Kungen
    Mizusako, Yusei
    Hori, Takuro
    Matsumoto, Seiichiro
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (15)
  • [49] Energy backtransfer and infrared photoresponse in erbium-doped silicon p-n diodes
    Hamelin, N
    Kik, PG
    Suyver, JF
    Kikoin, K
    Polman, A
    Schönecker, A
    Saris, FW
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (09) : 5381 - 5387
  • [50] The Effect of Intrinsic Defects on Resistive Switching Based on p-n Heterojunction
    Zheng, K.
    Sun, X. W.
    Teo, K. L.
    NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2013, 5 (08) : 868 - 871
12345