EXCESS SURFACE CURRENTS IN P-N JUNCTIONS AND BIPOLAR TRANSISTORS

被引：7

|

作者：

ESTEVE, D

MARTINOT, H

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 08期

关键词：

D O I：

10.1016/0038-1101(71)90149-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：693 / &

相关论文

共 50 条

[1] FIELD MODULATION OF LIQUID INDUCED EXCESS SURFACE CURRENTS ON GERMANIUM P-N JUNCTIONS
ERIKSEN, WT
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (04) : 730 - 733
[2] (EXCESS CURRENT IN P-N JUNCTIONS ASSOCIATED WITH SURFACE STATES)
ESTEVE, D
[J]. ELECTRONICS LETTERS, 1968, 4 (15) : 305 - &
[3] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489
[4] DIFFUSION CAPACITANCE OF P-N JUNCTIONS AND TRANSISTORS
BULUCEA, CD
[J]. ELECTRONICS LETTERS, 1968, 4 (25) : 559 - &
[5] EXCESS CURRENTS IN P-N-JUNCTIONS
IVASHCHENKO, AI
SLOBODCHIKOV, SV
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (10): : 1177 - 1178
[6] SURFACE EFFECTS ON SILICON P-N JUNCTIONS - ORIGIN OF ANOMALOUS CHANNEL CURRENTS
GROVE, AS
FITZGERA.DJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (09) : 508 - &
[7] EXCESS NOISE IN NARROW GERMANIUM P-N JUNCTIONS
YAJIMA, T
ESAKI, L
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1958, 13 (11) : 1281 - 1287
[8] MECHANISM OF EXCESS CURRENTS IN P-N-JUNCTIONS
KERNER, BS
OSIPOV, VV
SMOLIN, OV
SUKHANOV, AN
TAUBKIN, II
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (09): : 1090 - 1091
[9] Linearization of P-N junctions by the same P-N junctions
Bruck, YM
[J]. 27TH EUROPEAN MICROWAVE 97, CONFERENCE + EXHIBITION - BRIDGING THE GAP BETWEEN INDUSTRY AND ACADEMIA, VOLS I AND II, 1997, : 243 - 248
[10] KINETICS OF RECOMBINATION OF EXCESS CARRIERS IN GAAS P-N JUNCTIONS
IMENKOV, AN
KOZLOV, MM
NASLEDOV, DN
TSARENKO.BV
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (07): : 1669 - +

← 1 2 3 4 5 →