Bipolar Photoresponse in p-n Heterojunction for Spectrally Distinctive Photodetection

被引：0
|
作者：
Chen, Wei [1 ]
Wang, Danhao [2 ]
Luo, Dongyang [1 ]
Kang, Yang [1 ]
Fang, Shi [1 ]
Sun, Haiding [1 ]
机构：
[1] Univ Sci & Technol China, Sch Microelect, Hefei 230000, Peoples R China
[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
来源：
2023 IEEE PHOTONICS CONFERENCE, IPC | 2023年
关键词：
GaN nanowires; p-n junction; photoelectrochemical photodetectors; dual-polarity photocurrent;
D O I：
10.1109/IPC57732.2023.10360647
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We constructed a bipolar photoresponse photodetector based on Pt nanoparticle-modified p-AlGaN/n-GaN nanowires p-n heterojunctions. The bidirectional photocurrent phenomenon was observed in the semiconductor p-n heterojunction under 254 nm and 365 nm irradiation, overcoming the limitation of the unidirectional photocurrent of conventional p-n junctions.
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页数：2
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