Bipolar Photoresponse in p-n Heterojunction for Spectrally Distinctive Photodetection

被引：0

作者：

Chen, Wei ^{[1
]}

Wang, Danhao ^{[2
]}

Luo, Dongyang ^{[1
]}

Kang, Yang ^{[1
]}

Fang, Shi ^{[1
]}

Sun, Haiding ^{[1
]}

机构：

[1] Univ Sci & Technol China, Sch Microelect, Hefei 230000, Peoples R China

[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

2023 IEEE PHOTONICS CONFERENCE, IPC | 2023年

关键词：

GaN nanowires; p-n junction; photoelectrochemical photodetectors; dual-polarity photocurrent;

D O I：

10.1109/IPC57732.2023.10360647

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We constructed a bipolar photoresponse photodetector based on Pt nanoparticle-modified p-AlGaN/n-GaN nanowires p-n heterojunctions. The bidirectional photocurrent phenomenon was observed in the semiconductor p-n heterojunction under 254 nm and 365 nm irradiation, overcoming the limitation of the unidirectional photocurrent of conventional p-n junctions.

引用

页数：2

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