Design and optimization of vertical nanowire tunnel FET with electrostatic doping

While dealing with the nanoscale regime, most devices make sacrifices in terms of performance. So to meet the performance requirements, Electrostatic doped Vertical Nanowire Tunnel Field Effect Transistor (E-VNWTFET) is proposed and analysed in this work. The dimensions of Electrostatic VNWTFET structure are scaled down and then the analog performance parameters transconductance g(m), g(m2) (2nd order), g(m3) (3rd order) and linearity parameters 2nd order Voltage Interception Point VIP2, 3rd order Voltage Interception Point VIP3, 3rd order Input Interception Point IIP3 and 3rd order Intermodulation Distortion IMD3 are analysed. It is observed that electrostatic technique of doping is better than charge plasma (CP) technique; because in CP technique costly metals are required for doping. The analog performance parameters of E-VNWTFET are investigated and using device simulation the demonstrated characteristics are compared with CP-VNWTFET. After simulation, the device exhibits ON current I-ON of 3.5 mu A mu m(-1) and OFF current I-OFF of 6.6 x 10(-18 )A mu m(-1); which offers a significant I-ON/I-OFF of 10(11). The reported subthreshold swing and Drain-induced barrier lowering DIBL are approx. 9.7 mV/Decade and 37.8 mV/V respectively.