Metastable Electron Traps in Modified Silicon-on-Insulator Wafer

被引：0

作者：

戴丽华 ^{[1
,2
]}

毕大炜 ^{[1
]}

张正选 ^{[1
]}

解鑫 ^{[1
,2
]}

胡志远 ^{[1
]}

黄辉祥 ^{[3
]}

邹世昌 ^{[1
]}

机构：

[1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences

[2] University of Chinese Academy of Sciences

[3] Information Engineering College, Jimei University

来源：

Chinese Physics Letters | 2018年 / 05期

基金：

中国国家自然科学基金;

关键词：

SOI; Si; Metastable Electron Traps in Modified Silicon-on-Insulator Wafer;

D O I：

暂无

中图分类号：

TN304.12 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator(SOI) wafers under different Si ion implantation conditions. It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device. It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.

引用

页码：91 / 94

页数：4

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