An optically pumped GaN/AlGaN quantum well intersubband terahertz laser

被引：0

作者：

傅爱兵 ^{[1
]}

郝明瑞 ^{[1
]}

杨耀 ^{[1
]}

沈文忠 ^{[1
]}

刘惠春 ^{[1
]}

机构：

[1] Key Laboratory of Artificial Structures and Quantum Control(Minister of Education),Department of Physics,Shanghai Jiao Tong University

来源：

Chinese Physics B | 2013年 / 02期

关键词：

quantum well structure; intersubband terahertz laser; GaN;

D O I：

暂无

中图分类号：

TN248 [激光器];

学科分类号：

0803 ; 080401 ; 080901 ;

摘要：

We propose an optically pumped nonpolar GaN/AlGaN quantum well(QW) active region design for terahertz(THz) lasing in the wavelength range of 30 μm～ 40 μm and operating at room temperature.The fast longitudinal optical(LO) phonon scattering in GaN/AlGaN QWs is used to depopulate the lower laser state,and more importantly,the large LO phonon energy is utilized to reduce the thermal population of the lasing states at high temperatures.The influences of temperature and pump intensity on gain and electron densities are investigated.Based on our simulations,we predict that with a sufficiently high pump intensity,a room temperature operated THz laser using a nonpolar GaN/AlGaN structure is realizable.

引用

页码：393 / 398

页数：6

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