Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure

被引：5

作者：

Gamov, N. A. ^{[1
]}

Zhdanova, E. V. ^{[1
]}

Zverev, M. M. ^{[1
]}

Peregoudov, D. V. ^{[1
]}

Studenov, V. B. ^{[1
]}

Mazalov, A. V. ^{[2
]}

Kureshov, V. A. ^{[2
]}

Sabitov, D. R. ^{[2
]}

Padalitsa, A. A. ^{[2
]}

Marmalyuk, A. A. ^{[2
,3
]}

机构：

[1] Tech Univ, Moscow State Inst Radio Engn Elect & Automat, Moscow 119454, Russia

[2] OJSC MF Stelmakh Polyus Res Inst, Moscow 117342, Russia

[3] Natl Nucl Univ MEPhI, Moscow 115549, Russia

来源：

QUANTUM ELECTRONICS | 2015年 / 45卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

electron-beam-pumped laser; quantum-well structure; quantum well; BLUE;

D O I：

10.1070/QE2015v045n07ABEH015780

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The parameters of pulsed blue-violet (lambda approximate to 430 nm at T = 300 K) lasers based on an AlGaN/InGaN/GaN structure with five InGaN quantum wells and transverse electron-beam pumping are studied. At room temperature of the active element, the minimum electron energy was 9 keV and the minimum threshold electron beam current density was 8 A cm(-2) at an electron energy of 18 keV.

引用

页码：601 / 603

页数：3

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