Change in the Properties of AlGaN/InGaN/GaN Structures during the Operation of Electron-Beam-Pumped and Optically Pumped Pulse-Periodic Lasers Based on Them

被引:0
|
作者
Zverev, M. M. [1 ]
Gamov, N. A. [1 ]
Gladyshev, N. I. [1 ]
Zhdanova, E. V. [1 ]
Loktionov, D. E. [1 ]
Studionov, V. B. [1 ]
Kureshov, V. A. [2 ]
Mazalov, A. V. [2 ]
Sabitov, D. R. [2 ]
Padalitsa, A. A. [2 ]
Marmalyuk, A. A. [2 ]
Kozlovsky, V. I. [3 ]
Mituhliaev, V. B. [4 ]
机构
[1] Moscow Technol Univ MIREA, Moscow 119454, Russia
[2] Stelmakh Res Inst Polyus, Moscow 117342, Russia
[3] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia
[4] Res Ctr Study Surface & Vacuum Properties, Moscow 119421, Russia
来源
JOURNAL OF SURFACE INVESTIGATION | 2019年 / 13卷 / 01期
关键词
semiconductor laser with electron-beam- and optical pumping; quantum-size structure; degradation; DISLOCATIONS; DEGRADATION; CENTERS;
D O I
10.1134/S1027451019010385
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
During the operation of lasers based on an AlGaN/InGaN/GaN structure with electron-beam- and optical pumping, a gradual decrease in the output power is observed. In the first minutes of the operation of optical pumping lasers, a certain increase (by 5-10%) in the output power with a successive gradual decrease can be observed. Upon sample cooling, the rate of output-power degradation decreases. A decrease in the output power during operation of the laser is accompanied by changes in the emission spectrumthe line maximum shifts to the short-wavelength region and additional maxima appear. The observed effects can be explained both by the passivation of the initial defects and the diffusion of atoms of the structure during laser operation. The changes in the emission spectra are apparently associated with competition between two different generation channels.
引用
收藏
页码:101 / 104
页数:4
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