Low-threshold electron-beam-pumped green quantum-well heterostructure semiconductor lasers

被引：12
|
作者：
Zverev, MM [1 ]
Peregoudov, DV
Sedova, IV
Sorokin, SV
Ivanov, SV
Kop'ev, PS
机构：
[1] State Res Ctr Russian Federat, Troitsk Inst Innovat & Fus Res, Troitsk 142092, Moscow Region, Russia
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[3] Tech Univ, Moscow State Inst Radio Engn Elect & Automat, Moscow 117454, Russia
来源：
QUANTUM ELECTRONICS | 2004年 / 34卷 / 10期
关键词：
electron-beam-pumped laser; quantum-well structure;
D O I：
10.1070/QE2004v034n10ABEH002752
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The parameters of 494-555-nm Cd(Zn)Se/ZnMgSSe green lasers with differently designed active regions pumped by a 8-30-keV electron beam are studied. The minimum threshold current density (0.6-0.8 A cm(-2) at room temperature) is obtained for a structure with the active region consisting of a ZnSe quantum well with a CdSe fractional monolayer insertion.
引用
收藏
页码：909 / 911
页数：3
相关论文
共 50 条
  • [1] ELECTRON-BEAM-PUMPED SEMICONDUCTOR LASERS
    NAMBA, S
    MASUDA, K
    KAWABE, M
    ARITOME, H
    MASUYAMA, A
    IWAI, S
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : C110 - &
  • [2] Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure
    Gamov, N. A.
    Zhdanova, E. V.
    Zverev, M. M.
    Peregoudov, D. V.
    Studenov, V. B.
    Mazalov, A. V.
    Kureshov, V. A.
    Sabitov, D. R.
    Padalitsa, A. A.
    Marmalyuk, A. A.
    [J]. QUANTUM ELECTRONICS, 2015, 45 (07) : 601 - 603
  • [3] ELECTRON-BEAM-PUMPED SEMICONDUCTOR-LASERS
    BOGDANKEVICH, OV
    [J]. KVANTOVAYA ELEKTRONIKA, 1994, 21 (12): : 1113 - 1136
  • [4] Pulsed heating of active elements of low-threshold electron-beam-pumped green lasers based on nanostructures of II–VI compounds
    M. M. Zverev
    N. A. Gamov
    E. V. Zhdanova
    D. V. Peregoudov
    V. B. Studionov
    I. V. Sedova
    S. V. Gronin
    S. V. Sorokin
    S. V. Ivanov
    P. S. Kop’ev
    [J]. Optics and Spectroscopy, 2009, 107 : 383 - 387
  • [5] LASING THRESHOLD AND BEAM DIVERGENCE IN LONGITUDINALLY ELECTRON-BEAM-PUMPED SEMICONDUCTOR-LASERS
    BOGDANKEVICH, IL
    BOGDANKEVICH, OV
    DARZNEK, SA
    ZVEREV, MM
    TUMANOVA, LA
    USHAKHIN, VA
    [J]. KVANTOVAYA ELEKTRONIKA, 1985, 12 (04): : 848 - 851
  • [6] Pulsed heating of active elements of low-threshold electron-beam-pumped green lasers based on nanostructures of II-VI compounds
    Zverev, M. M.
    Gamov, N. A.
    Zhdanova, E. V.
    Peregoudov, D. V.
    Studionov, V. B.
    Sedova, I. V.
    Gronin, S. V.
    Sorokin, S. V.
    Ivanov, S. V.
    Kop'ev, P. S.
    [J]. OPTICS AND SPECTROSCOPY, 2009, 107 (03) : 383 - 387
  • [7] High-power low-threshold optically pumped type-II quantum-well lasers
    Lin, CH
    Murry, SJ
    Yang, RQ
    Pei, SS
    Le, HQ
    Yan, C
    Gianardi, DM
    McDaniel, DL
    Falcon, M
    [J]. INFRARED APPLICATIONS OF SEMICONDUCTORS II, 1998, 484 : 107 - 116
  • [8] LOW-THRESHOLD INGAAS/INGAASP MULTIPLE QUANTUM-WELL LASERS GROWN BY CHEMICAL BEAM EPITAXY
    YAMADA, T
    IGA, R
    NOGUCHI, Y
    SUGIURA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A): : L1741 - L1743
  • [9] SEMICONDUCTOR ELECTRON-BEAM-PUMPED LASERS BASED ON ZNCDS COMPOUNDS
    GRIBKOVSKII, VP
    GURSKII, AL
    DAVYDOV, SV
    LUTSENKO, EV
    KULAK, II
    MITKOVETS, AI
    YABLONSKII, GP
    GREMERIK, VF
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 : 521 - 523
  • [10] SEMICONDUCTOR ELECTRON-BEAM-PUMPED LASERS OF RADIATING MIRROR TYPE
    BOGDANKEVICH, OV
    DARZNEK, SA
    PECHENOV, AN
    VASILIEV, BI
    ZVEREV, MM
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 342 - 347
12345