Low-threshold electron-beam-pumped green quantum-well heterostructure semiconductor lasers

被引：12
|
作者：
Zverev, MM [1 ]
Peregoudov, DV
Sedova, IV
Sorokin, SV
Ivanov, SV
Kop'ev, PS
机构：
[1] State Res Ctr Russian Federat, Troitsk Inst Innovat & Fus Res, Troitsk 142092, Moscow Region, Russia
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[3] Tech Univ, Moscow State Inst Radio Engn Elect & Automat, Moscow 117454, Russia
来源：
QUANTUM ELECTRONICS | 2004年 / 34卷 / 10期
关键词：
electron-beam-pumped laser; quantum-well structure;
D O I：
10.1070/QE2004v034n10ABEH002752
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The parameters of 494-555-nm Cd(Zn)Se/ZnMgSSe green lasers with differently designed active regions pumped by a 8-30-keV electron beam are studied. The minimum threshold current density (0.6-0.8 A cm(-2) at room temperature) is obtained for a structure with the active region consisting of a ZnSe quantum well with a CdSe fractional monolayer insertion.
引用
收藏
页码：909 / 911
页数：3
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