THE VARIBAND ALXGA1-XAS HETEROSTRUCTURE FOR AN ELECTRON-BEAM-PUMPED LASER

被引:0
|
作者
BOGDANKEVICH, OV
BORISOV, NA
VLASENKO, NV
LOZOVSKII, VN
POPOV, VP
USVYAT, II
机构
来源
KVANTOVAYA ELEKTRONIKA | 1987年 / 14卷 / 09期
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1809 / 1811
页数:3
相关论文
共 50 条
  • [1] The beam quality of GaAs/AlxGa1-xAs strip buried heterostructure laser
    Zhou, GQ
    Zhao, DM
    Wang, SM
    [J]. OPTICS COMMUNICATIONS, 2002, 202 (1-3) : 155 - 160
  • [2] DEGRADATION CHARACTERISTICS OF CW OPTICALLY PUMPED ALXGA1-XAS HETEROSTRUCTURE LASERS
    JOHNSTON, WD
    MILLER, BI
    [J]. APPLIED PHYSICS LETTERS, 1973, 23 (04) : 192 - 194
  • [3] SURFACE EMITTING LASER DIODE WITH ALXGA1-XAS/GAAS MULTILAYERED HETEROSTRUCTURE
    OGURA, M
    YAO, T
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 784 - 787
  • [4] CATASTROPHIC DAMAGE OF ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASER MATERIAL
    HENRY, CH
    PETROFF, PM
    LOGAN, RA
    MERRITT, FR
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3721 - 3732
  • [5] Oxidized AlxGa1-xAs heterostructure planar waveguides
    Luo, Y
    Hall, DC
    Kou, L
    Steingart, L
    Jackson, JH
    Blum, O
    Hou, H
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (20) : 3078 - 3080
  • [6] DEGRADATION OF ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASERS
    YONEZU, H
    SAKUMA, I
    KAMESHIM.T
    UENO, M
    KOBAYASH.K
    NISHIDA, K
    NANNICH, Y
    HAYASHI, I
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (12) : 1175 - 1175
  • [7] Electron scattering by optical phonons in AlxGa1-xAs/GaAs/AlxGa1-xAs quantum wells
    Zianni, X
    Simserides, CD
    Triberis, GP
    [J]. PHYSICAL REVIEW B, 1997, 55 (24): : 16324 - 16330
  • [8] SENSITIVITY OF STRAIN-GAUGE RESISTORS BASED ON ALXGA1-XAS VARIBAND FILMS
    GRITSYUS, A
    ZHILENIS, S
    SHIMKYAVICHYUS, C
    SHIMULITE, E
    [J]. INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1981, 24 (05) : 1322 - 1323
  • [9] ELECTRON-MOBILITY IN ALXGA1-XAS
    NEUMANN, H
    FLOHRER, U
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (02): : K145 - K147
  • [10] REDISTRIBUTION OF INTRINSIC IMPURITIES IN VARIBAND LAYERS OF ALXGA1-XAS DURING ZONE RECRYSTALLIZATION
    LOZOVSKII, VN
    LUNIN, LS
    LUNINA, OD
    [J]. INORGANIC MATERIALS, 1985, 21 (05) : 653 - 656