A Low-Cost and Triple-Node-Upset Self-Recoverable Latch Design With Low Soft Error Rate

被引:0
|
作者
Hao, Licai [1 ,2 ]
Tian, Lang [1 ,2 ]
Wang, Hao [1 ,2 ]
Zhao, Shiyu [1 ,2 ]
Zhao, Qiang [1 ,2 ]
Peng, Chunyu [1 ,2 ]
Dai, Chenghu [1 ,2 ]
Lin, Zhitin [1 ,2 ]
Wu, Xiulong [1 ,2 ]
机构
[1] Anhui Univ, Sch Integrated Circuits, Hefei 230601, Peoples R China
[2] Anhui Univ, Anhui Prov High Performance Integrated Circuit Eng, Hefei 230601, Peoples R China
基金
中国国家自然科学基金;
关键词
Polarity design; radiation-hardened latch; soft error rate (SER); triple node upset; HIGH-PERFORMANCE; LOW-POWER; ROBUST; SRAM;
D O I
10.1109/TVLSI.2025.3528199
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
With the decrease in feature size of transistors, latches are more sensitive to single-event multiple node upset (MNU), including double node upset (DNU) and triple node upset (TNU). However, the reported TNU self-recoverable (TNUR) latches are facing problems with large areas and power consumption. Based on the polarity design, this article proposes a low-cost TNUR latch (LCTRL) with a low soft error rate (SER) in 28-nm CMOS technology. The proposed LCTRL mainly consists of four interlocked modules and a clock-gated inverter. Compared with the state-of-the-art TNUR latches, including LCTNURL, IHTRL, FATNU, and TRLW, the power consumption, D-Q delay, CLK-to-Q delay, area, and the power-delay-area product (PDAP) of the proposed LCTRL are reduced by 55.09%, 38.64%, 42.93%, 44.65%, and 83.50%, respectively. Due to the polarity design, the SER of the proposed LCTRL is the smallest among compared latches, which suggests that the proposed LCTRL is suitable for use in radiation environments.
引用
收藏
页数:10
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