Effects of Sn+ ion implantation and post-implantation annealing on the thermoelectric properties of n-type PbTe in FGM design

被引：0
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作者：
Shen, Q. [1 ]
Zhang, L. [1 ]
Wang, G. [1 ]
Chen, L. [2 ]
Tu, R. [2 ]
Hirai, T. [2 ]
机构：
[1] State Key Lab. of Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
[2] Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-77, Japan
来源：
Materials Science Forum | 1999年 / 308-311卷
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页码：711 / 716
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