Effects of Sn+ ion implantation and post-implantation annealing on the thermoelectric properties of n-type PbTe in FGM design

被引：0
|
作者：
Shen, Q. [1 ]
Zhang, L. [1 ]
Wang, G. [1 ]
Chen, L. [2 ]
Tu, R. [2 ]
Hirai, T. [2 ]
机构：
[1] State Key Lab. of Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
[2] Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-77, Japan
来源：
Materials Science Forum | 1999年 / 308-311卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：711 / 716
相关论文
共 50 条
  • [31] Low-Temperature Synthesis and Thermoelectric Properties of n-Type PbTe
    Papageorgiou, Ch.
    Giapintzakis, J.
    Kyratsi, Th.
    JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (07) : 1911 - 1917
  • [32] Improvement and thermal stability of thermoelectric properties for n-type segmented PbTe
    Yoneda, S
    Kaibe, HT
    Okumura, T
    Shinohara, Y
    Imai, Y
    Nishida, IA
    Mochimaru, T
    Takahashi, K
    Noguchi, T
    Shiota, I
    FUNCTIONALLY GRADED MATERIALS 1996, 1997, : 575 - 580
  • [33] Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN
    Zhang, Limin
    Zhang, Xiaodong
    You, Wei
    Yang, Zhen
    Wang, WenXiu
    Ge, Qing
    Liu, Zhengmin
    CENTRAL EUROPEAN JOURNAL OF PHYSICS, 2008, 6 (02): : 283 - 288
  • [34] Magnetic properties of Fe+-implanted silica films after post-implantation annealing
    Ding, XZ
    Tay, BK
    Shi, X
    Chiah, MF
    Cheung, WY
    Wong, SP
    Xu, JB
    Wilson, IH
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) : 2745 - 2749
  • [35] Recovery of tensile properties in helium implanted EUROFER97 by post-implantation annealing
    Jung, P.
    Chen, J.
    Klein, H.
    JOURNAL OF NUCLEAR MATERIALS, 2006, 356 (1-3) : 88 - 94
  • [36] Synergistically optimizing thermoelectric transport properties of n-type PbTe via Se and Sn co-alloying
    Xiao, Yu
    Li, Wei
    Chang, Cheng
    Chen, Yuexing
    Huang, Li
    He, Jiaqing
    Zhao, Li-Dong
    JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 724 : 208 - 221
  • [37] Effects of different post-implantation annealing conditions on the electrical properties of interfaces to p-type implanted 4H-SiC
    Frazzetto, A.
    Roccaforte, F.
    Giannazzo, F.
    Lo Nigro, R.
    Saggio, M.
    Zanetti, E.
    Raineri, V.
    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 825 - +
  • [38] Ultrashallow and low-leakage p+n junction formation by plasma immersion ion implantation (PIII) and low-temperature post-implantation annealing
    Kanemoto, K., 2001, Japan Society of Applied Physics (40):
  • [39] Ultrashallow and low-leakage p+n junction formation by plasma immersion ion implantation (PIII) and low-temperature post-implantation annealing
    Kanemoto, K
    Aharoni, H
    Ohmi, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (4B): : 2706 - 2711
  • [40] THE N-TYPE DOPING OF POLYANILINE FILMS BY ION-IMPLANTATION
    WANG, WM
    LIN, SH
    BAO, JG
    RONG, TW
    WAN, HG
    SUN, JH
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 74 (04): : 514 - 518
12345