共 50 条
- [2] SiO2 etching using inductively coupled plasma ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 1998, 81 (09): : 21 - 29
- [3] SiO2 etching using inductively coupled plasma Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 1998, 81 (09): : 21 - 29
- [4] Radical behavior in inductively coupled fluorocarbon plasma for SiO2 etching Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (7 B): : 4845 - 4848
- [5] Radical behavior in inductively coupled fluorocarbon plasma for SiO2 etching JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (7B): : 4845 - 4848
- [6] SiO2 etching employing inductively coupled plasma with hot inner wall JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (4B): : 2472 - 2476
- [7] Simulation of SiO2 etching in an inductively coupled CF4 plasma MODERN PHYSICS LETTERS B, 2017, 31 (06):
- [8] Inductively coupled plasma of fluorocarbon plasma glass etching process on Planar Lightwave Circuit device fabrication 2007 ICTON MEDITERRANEAN WINTER CONFERENCE, 2007, : 67 - +
- [9] High rate and highly selective SiO2 etching employing inductively coupled plasma Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (4 B): : 2139 - 2144
- [10] Negative ion formation in SiO2 etching using a pulsed inductively coupled plasma JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12B): : 6894 - 6898