Inductively coupled plasma etching of SiO2 layers for planar lightwave circuits

被引：3
|
作者：
Jung, Sun-Tae [1 ]
Song, Hyung-Seung [1 ]
Kim, Dong-Su [1 ]
Kim, Hyoun-Soo [1 ]
机构：
[1] Applied Optics Research Group, Samsung Electronics Co., Suwon, P.O., Kyunggi-Do, Korea, Republic of
来源：
Thin Solid Films | 1999年 / 341卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
下载
收藏
页码：188 / 191
相关论文
共 50 条
  • [41] Characterization of Si3N4/SiO2 planar lightwave circuits and ring resonators
    Guo, J
    Vawter, GA
    Shaw, MJ
    Hadley, GR
    Esherick, P
    Jain, A
    Alford, CR
    Sullivan, CT
    OPTICAL COMPONENTS AND MATERIALS, 2004, 5350 : 13 - 22
  • [42] Room temperature inductively coupled plasma etching of InP with Cl2 mixtures using SiO2 and photoresist masks
    Li, Qingyue
    Deeb, Claire
    Debregeas, Helene
    Pelouard, Jean-Luc
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2024, 42 (02):
  • [43] Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor
    Rueger, NR
    Doemling, MF
    Schaepkens, M
    Beulens, JJ
    Standaert, TEFM
    Oehrlein, GS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (05): : 2492 - 2502
  • [44] Experimental Study of SiO2 Sputter Etching Process in 13.56 MHz rf-Biased Inductively Coupled Plasma
    Han, Chuankun
    Yang, Yiyong
    Liu, Weifeng
    Lu, Yijia
    Cheng, Jia
    SPIN, 2018, 8 (02)
  • [45] INVESTIGATION OF INDUCTIVELY COUPLED SF6 PLASMA ETCHING OF Si AND SiO2 THROUGHT A GLOBAL MODEL COUPLED WITH LANGMUIR ADSORPTION KINETICS
    Toneli, David A.
    Pessoa, Rodrigo S.
    Roberto, Marisa
    2016 43RD IEEE INTERNATIONAL CONFERENCE ON PLASMA SCIENCE (ICOPS), 2016,
  • [46] In situ infrared reflection absorption spectroscopy of materials formed on SiO2 at chamber surface in inductively coupled plasma etching of aluminum
    Kawada, H
    Kitsunai, H
    Tsumaki, N
    INTERCONNECT AND CONTACT METALLIZATION, 1998, 97 (31): : 189 - 195
  • [47] Substrate bias effects in high-aspect-ratio SiO2 contact etching using an inductively coupled plasma reactor
    Digital Semiconductor, MA 01749, United States
    不详
    不详
    J. Vac. Sci. Technol. A Vac. Surf. Films, 3 (853-858):
  • [48] Isotropic Plasma Etching of SiO2 Films
    Kovalevskii A.A.
    Malyshev V.S.
    Tsybul'skii V.V.
    Sorokin V.M.
    Russian Microelectronics, 2002, 31 (5) : 290 - 294
  • [49] Effect of radio frequency bias power on SiO2 feature etching in inductively coupled fluorocarbon plasmas
    Schaepkens, M
    Oehrlein, GS
    Cook, JM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (02): : 848 - 855
  • [50] Deposition of SiO2 in a SiH4/O2 inductively coupled plasma
    Tong, L. Z.
    26TH SYMPOSIUM ON PLASMA SCIENCES FOR MATERIALS (SPSM26), 2014, 518
12345