High rate and highly selective SiO2 etching employing inductively coupled plasma

被引：0

作者：

Fukasawa, Takayuki ^{[1
]}

Nakamura, Akihiro ^{[1
]}

Shindo, Haruo ^{[1
]}

Horiike, Yasuhiro ^{[1
]}

机构：

[1] Hiroshima Univ, Higashi-Hiroshima, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 4 B期

关键词：

Plasma applications;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：2139 / 2144

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