High rate and highly selective SiO2 etching employing inductively coupled plasma

被引：0
|
作者：
Fukasawa, Takayuki [1 ]
Nakamura, Akihiro [1 ]
Shindo, Haruo [1 ]
Horiike, Yasuhiro [1 ]
机构：
[1] Hiroshima Univ, Higashi-Hiroshima, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 4 B期
关键词：
Plasma applications;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
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页码：2139 / 2144
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