Study of trapping levels in doped HgI2 radiation detectors

被引：0

作者：

Sandia Natl Lab, Livermore, United States ^{[1
]}

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来源：

Nucl Instrum Methods Phys Res Sect A | / 1-2卷 / 10-13期

关键词：

Alpha particles - Butane - Charge carriers - Crystal defects - Crystal impurities - Crystal lattices - Deep level transient spectroscopy - Mercury compounds - Naphthalene - Paraffins - Polyethylene glycols - Polyethylenes;

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摘要：

The transient charge technique, TCT, was used to measure the trapping levels of pure and doped HgI2 detectors over the temperature range of 170-300 K. The dopants were excess of Hg and I2, naphthalene, butane, heavy paraffins, polyethylene and polyethylene glycol. The charge carriers were induced by α particles as well as by a UV nitrogen (337 nm) pulsed laser beam. The TCT determined trapping levels are compared with levels reported in literature from other solid state measurements.

引用

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