Device design consideration for 50 nm dynamic random access memory using bulk FinFET

被引：0
|
作者：
Han, Kyoung-Rok [1 ]
Choi, Byung-Kil [1 ]
Park, Tai-Su [2 ]
Yoon, Euijoon [2 ]
Chung, In-Young [3 ]
Lee, Jong-Ho [1 ]
机构：
[1] School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu, Korea, Republic of
[2] School of Materials Science and Engineering, Seoul National University, Seoul, Korea, Republic of
[3] Department of Electronic Engineering, Gyeongsang National University, Jinju, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2005年 / 44卷 / 4 B期
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页码：2176 / 2179
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