Device design consideration for 50 nm dynamic random access memory using bulk FinFET

被引：0
|
作者：
Han, Kyoung-Rok [1 ]
Choi, Byung-Kil [1 ]
Park, Tai-Su [2 ]
Yoon, Euijoon [2 ]
Chung, In-Young [3 ]
Lee, Jong-Ho [1 ]
机构：
[1] School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu, Korea, Republic of
[2] School of Materials Science and Engineering, Seoul National University, Seoul, Korea, Republic of
[3] Department of Electronic Engineering, Gyeongsang National University, Jinju, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2005年 / 44卷 / 4 B期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2176 / 2179
相关论文
共 50 条
  • [31] High contrast chemically amplified 193 nm resist for gigabit dynamic random access memory generation
    Itani, T
    Yoshino, H
    Yamana, M
    Takimoto, M
    Tanabe, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 3322 - 3325
  • [32] Fin and Recess-Channel Metal Oxide Semiconductor Field Effect Transistor for Sub-50nm Dynamic Random Access Memory Cell
    Song, Jae Young
    Kim, Jong Pil
    Kim, Sang Wan
    Oh, Jeong-Hoon
    Ryoo, Kyung-Chang
    Sun, Min-Chul
    Kim, Garam
    Yun, Jang-Gn
    Shin, Hyungcheol
    Park, Byung-Gook
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (10) : 1042021 - 1042025
  • [33] Design Optimization of 16-nm Bulk FinFET Technology via Geometric Programming
    Su, Ping-Hsun
    Li, Yiming
    2014 INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE), 2014,
  • [34] Design of a dynamic memory access scheduler
    Zheng, Jun
    Sun, Kang
    Pan, Xuezeng
    Ping, Lingdi
    ASICON 2007: 2007 7TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS, 2007, : 20 - 23
  • [35] DESIGN FOR AN OPTICAL RANDOM-ACCESS MEMORY
    MURDOCCA, MJ
    SUGLA, B
    APPLIED OPTICS, 1989, 28 (01): : 182 - 188
  • [36] NOVEL DYNAMIC RANDOM-ACCESS MEMORY CELL USING 3 DIODES
    JEUNG, YC
    IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1986, 133 (02): : 61 - 62
  • [37] Performance Evaluation of Static Random Access Memory (SRAM) based on Negative Capacitance FinFET
    Sun, Chen
    Han, Kaizhen
    Gong, Xiao
    17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019), 2019,
  • [38] Gate contact resistive random access memory in nano scaled FinFET logic technologies
    Hsu, Meng-Yin
    Shih, Yi-Hong
    Chih, Yue-Der
    Lin, Chrong Jung
    King, Ya-Chin
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (04)
  • [39] Twin-Bit Resistive Random Access Memory in FinFET CMOS Logic Technologies
    Lee, Chieh
    Bung, Yu-Ting
    Lin, Cheng-Jun
    King, Ya-Chin
    Lin, Chrong Jung
    2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), 2019,
  • [40] Characteristics Fluctuation of Sub-3-nm Bulk FinFET Devices Induced by Random Interface Traps
    Kola, Sekhar Reddy
    Chuang, Min -Hui
    Li, Yiming
    2023 IEEE 23RD INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY, NANO, 2023, : 917 - 922
12345