Resistive Random Access Memory: A Review of Device Challenges

被引：63
|
作者：
Gupta, Varshita [1 ]
Kapur, Shagun [1 ]
Saurabh, Sneh [1 ]
Grover, Anuj [1 ]
机构：
[1] IIIT, Dept ECE, Delhi 110020, India
来源：
IETE TECHNICAL REVIEW | 2020年 / 37卷 / 04期
关键词：
RRAM; Conducting filament; Materials; Variations; Scalability; Resistive switching; SWITCHING CHARACTERISTICS; CONDUCTING FILAMENTS; RRAM DEVICES; RESISTANCE; VOLTAGE; 1T1R; MECHANISMS; UNIFORMITY; ENDURANCE; BIPOLAR;
D O I：
10.1080/02564602.2019.1629341
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
With scaling, existing charge-based memory technologies exhibit limitations due to charge leaking away easily in a smaller device. Therefore, non-charge based memory technologies such as Resistive Random Access Memory (RRAM) become promising for future applications. RRAM is not only more scalable, but is typically faster and consumes less power than the existing memory technologies. However, RRAM suffers from higher impact of variations and reliability issues. In this review paper, we explain the basic aspects of RRAMs, highlight their advantages and elucidate challenges involved in replacing the existing memory technologies with RRAMs.
引用
收藏
页码：377 / 390
页数：14
相关论文
共 50 条
  • [1] A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing
    Yoon, Jeong Hyun
    Song, Young-Woong
    Ham, Wooho
    Park, Jeong-Min
    Kwon, Jang-Yeon
    [J]. APL MATERIALS, 2023, 11 (09)
  • [2] The role of the inserted layer in resistive random access memory device
    Zhang, Dainan
    Ma, Guokun
    Zhang, Huaiwu
    Tang, Xiaoli
    Zhong, Zhiyong
    Jie, Li
    Su, Hua
    [J]. MATERIALS RESEARCH EXPRESS, 2016, 3 (07)
  • [3] Challenges and Opportunities for HfOX Based Resistive Random Access Memory
    Chen, Y. S.
    Lee, H. Y.
    Chen, P. S.
    Tsai, C. H.
    Gu, P. Y.
    Wu, T. Y.
    Tsai, K. H.
    Sheu, S. S.
    Lin, W. P.
    Lin, C. H.
    Chiu, P. F.
    Chen, W. S.
    Chen, F. T.
    Lien, C.
    Tsai, M. -J.
    [J]. 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2011,
  • [4] Zirconia quantum dots for a nonvolatile resistive random access memory device
    He, Xiang-lei
    Tang, Rui-jie
    Yang, Feng
    Kadhim, Mayameen S.
    Wang, Jie-xin
    Pu, Yuan
    Wang, Dan
    [J]. FRONTIERS OF INFORMATION TECHNOLOGY & ELECTRONIC ENGINEERING, 2019, 20 (12) : 1698 - 1705
  • [5] Titanium oxide vertical resistive random-access memory device
    Fryauf, David M.
    Norris, Kate J.
    Zhang, Junce
    Wang, Shih-Yuan
    Kobayashi, Nobuhiko P.
    [J]. MICRO & NANO LETTERS, 2015, 10 (07): : 321 - 323
  • [6] Zirconia quantum dots for a nonvolatile resistive random access memory device
    Xiang-lei He
    Rui-jie Tang
    Feng Yang
    Mayameen S. Kadhim
    Jie-xin Wang
    Yuan Pu
    Dan Wang
    [J]. Frontiers of Information Technology & Electronic Engineering, 2019, 20 : 1698 - 1705
  • [7] Application of Resistive Random Access Memory in Hardware Security: A Review
    Rajendran, Gokulnath
    Banerjee, Writam
    Chattopadhyay, Anupam
    Aly, Mohamed M. Sabry
    [J]. ADVANCED ELECTRONIC MATERIALS, 2021, 7 (12)
  • [8] Review on role of nanoscale HfO2 switching material in resistive random access memory device
    Napolean, A.
    Sivamangai, N. M.
    Rajesh, S.
    NaveenKumar, R.
    Nithya, N.
    Kamalnath, S.
    Aswathy, N.
    [J]. EMERGENT MATERIALS, 2022, 5 (02) : 489 - 508
  • [9] Review on role of nanoscale HfO2 switching material in resistive random access memory device
    Napolean A
    Sivamangai NM
    Rajesh S
    NaveenKumar R
    Nithya N
    Kamalnath S
    Aswathy N
    [J]. Emergent Materials, 2022, 5 : 489 - 508
  • [10] Solution-processed flexible NiO resistive random access memory device
    Kim, Soo-Jung
    Lee, Heon
    Hong, Sung-Hoon
    [J]. SOLID-STATE ELECTRONICS, 2018, 142 : 56 - 61
12345