Boron-induced electronic states in hydrogenated amorphous silicon

被引：0
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作者：
Lin, Shu-Ya [1 ]
机构：
[1] Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan
来源：
Thin Solid Films | 1999年 / 343卷
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Number:; -; Acronym:; NSC; Sponsor: National Science Council;
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页码：285 / 287
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