Gamma-irradiation-induced metastable states of undoped amorphous hydrogenated silicon

被引：0

作者：

M. S. Ablova

G. S. Kulikov

S. K. Persheev

机构：

[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute

来源：

Semiconductors | 2002年 / 36卷

关键词：

Silicon; Magnetic Material; Gamma Irradiation; Electromagnetism; Metastable State;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The conductivity of intrinsic amorphous hydrogenated silicon (a-Si:H) becomes higher upon gamma irradiation. This effect is due to an increase in the number of metastable D+ states in the mobility gap. At the same time, the conductivity of extrinsic (undoped) irradiated a-Si:H decreases. Most likely, gamma irradiation creates hydrogen-containing complexes in this material. The results obtained are discussed in comparison with the known data for B-or P-doped a-Si:H.

引用

页码：936 / 940

页数：4

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