Boron-induced electronic states in hydrogenated amorphous silicon

被引：0

作者：

Lin, Shu-Ya ^{[1
]}

机构：

[1] Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan

来源：

Thin Solid Films | 1999年 / 343卷

关键词：

Number:; -; Acronym:; NSC; Sponsor: National Science Council;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：285 / 287

共 50 条

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