ELECTRONIC STATES AND TOTAL ENERGIES IN HYDROGENATED AMORPHOUS-SILICON

被引：78

作者：

ALLAN, DC ^{[1
]}

JOANNOPOULOS, JD ^{[1
]}

POLLARD, WB ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV, DEPT PHYS, RALEIGH, NC 27650 USA

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.25.1065

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1065 / 1080

页数：16

共 50 条

[1] CALCULATIONS OF THE ELECTRONIC STATES OF HYDROGENATED AMORPHOUS-SILICON
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[4] ELECTRONIC STATES AT THE HYDROGENATED AMORPHOUS-SILICON SILICON- NITRIDE INTERFACE
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[5] LOCAL-STRUCTURE AND ELECTRONIC STATES IN HYDROGENATED AMORPHOUS-SILICON
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[9] DENSITY OF STATES IN HYDROGENATED AMORPHOUS-SILICON
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[10] LOCALIZED STATES AND THE ELECTRONIC-PROPERTIES OF A HYDROGENATED DEFECT IN AMORPHOUS-SILICON
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