EXCITONIC STATES IN HYDROGENATED AMORPHOUS-SILICON

被引：4
|
作者：
STUTZMANN, M
BRANDT, MS
机构：
[1] Max-Planck-Institut für Festkörperforschung, W-7000 Stuttgart 80
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1992年 / 141卷 / 1-3期
关键词：
D O I：
10.1016/S0022-3093(05)80523-X
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Experimental evidence for the existence of excitonic states in hydrogenated amorphous silicon is reviewed. It is shown that weakly coupled electron-hole pairs can be observed in spin-dependent recombination experiments up to room temperature. Details of the electron-hole interaction are discussed, and the role of excitonic states in the light-induced creation of metastable defects in amorphous silicon is examined.
引用
收藏
页码：97 / 105
页数：9
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