共 50 条
- [12] INITIAL STAGE OF LASER-INDUCED SELECTIVE CHEMICAL VAPOR DEPOSITION OF SILICON. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (12): : 2057 - 2060
- [13] CHEMICAL VAPOR-DEPOSITION OF AMORPHOUS-SILICON WITH SILANES FOR THIN-FILM TRANSISTORS - THE INFLUENCE OF THE AMORPHOUS-SILICON DEPOSITION TEMPERATURE JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (02): : 233 - 239
- [14] Deposition of pure hydrogenated amorphous silicon by plasma-enhanced chemical vapor deposition for polycrystalline silicon thin film transistors Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2005, 44 (6 A): : 3813 - 3816
- [15] Deposition of pure hydrogenated amorphous silicon by plasma-enhanced chemical vapor deposition for polycrystalline silicon thin film transistors JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (6A): : 3813 - 3816
- [16] Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11): : L227 - L229
- [17] In situ optical diagnostics of silicon chemical vapor deposition gas-phase processes CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY, 2003, 683 : 748 - 752
- [18] AMORPHOUS-SILICON THIN-FILM TRANSISTORS USING CHEMICAL VAPOR-DEPOSITION OF DISILANE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (10): : L1750 - L1752