Study of C49-TiSi2 and C54-TiSi2 formation on doped polycrystalline silicon using in situ resistance measurements during annealing

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Clevenger, L.A.

Mann, R.W.

Roy, R.A.

Saenger, K.L.

Cabral, C. Jr.

Piccirillo, J.

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Journal of Applied Physics | 1994年 / 76卷 / 12期

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