Axiotaxy and epitaxial textures in C54-TiSi2 films on Si(001) and Si(111) substrates

被引:3
|
作者
Geenen, F. A. [1 ]
Jordan-Sweet, J. [2 ]
Lavoie, C. [2 ]
Detavernier, C. [1 ]
机构
[1] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium
[2] IBM TJ Watson Res Ctr, Yorktown Hts, NY USA
关键词
titanium silicide; epitaxy; axiotaxy; texture; C54-TiSi2; THIN-FILMS; TISI2; C54; MICROSCOPY; CRYSTALS;
D O I
10.1088/1361-6463/aae003
中图分类号
O59 [应用物理学];
学科分类号
摘要
Titanium silicide can be used in micro-electronic applications to reduce the contact resistance for silicon-based transistors. This paper gives an overview of the preferred orientation between the Ti-silicide films and Si(0 0 1) and Si(1 1 1)-oriented substrates. We report on several axiotaxial alignments, which are observed in addition to the previously known epitaxial alignments. The axiotaxial textures can be related to the epitaxial one and its stability is interpreted through plane-to-plane alignment across the interface. Reducing the Ti film thickness from 30 to 8 nm favours the epitaxial alignment instead of the axiotaxial alignments.
引用
收藏
页数:9
相关论文
共 50 条
  • [1] Crystallography of TiSi2 (C54) epitaxy on (111)Si and (001)Si surfaces
    Zhang, Ming-Xing
    Qiu, Dong
    Kelly, Patrick M.
    THIN SOLID FILMS, 2008, 516 (16) : 5498 - 5502
  • [2] Transmission electron microscopy investigation of the formation of C54-TiSi2 phase on stressed (001)Si
    Cheng, SL
    Chang, SM
    Huang, HY
    Chen, LJ
    Tsai, CJ
    MICRON, 2002, 33 (06) : 543 - 547
  • [3] INVESTIGATION OF THE OXIDATION-KINETICS OF C54-TISI2 ON (001)SI BY TRANSMISSION ELECTRON-MICROSCOPY
    HUANG, GJ
    CHEN, LJ
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (07) : 3143 - 3149
  • [4] Mechanism of enhanced formation of C54-TiSi2 in high-temperature deposited Ti thin films on preamorphized, (001)Si
    Chang, SM
    Huang, HY
    Yang, HY
    Chen, LJ
    APPLIED PHYSICS LETTERS, 1999, 74 (02) : 224 - 226
  • [5] Formation of C54-TiSi2 enhanced by a thin interposing Mo layer on nitrogen ion implanted (001)Si
    Cheng, SL
    Jou, JJ
    Chen, LJ
    Tsui, BY
    MATERIALS CHEMISTRY AND PHYSICS, 1998, 54 (1-3) : 346 - 350
  • [6] Epitaxial growth of Er2O3 films on oxidized Si(111) and Si(001) substrates
    Zhu, Y. Y.
    Xu, R.
    Chen, S.
    Fang, Z. B.
    Xue, F.
    Fan, Y. L.
    Yang, X. J.
    Jiang, Z. M.
    THIN SOLID FILMS, 2006, 508 (1-2) : 86 - 89
  • [7] ELECTRICAL SIZE EFFECTS OF THIN C54-TISI2 FILMS GROWN ON SILICON SUBSTRATES
    YANG, JR
    LUE, JT
    SOLID STATE COMMUNICATIONS, 1988, 65 (12) : 1613 - 1616
  • [8] Mechanisms for the improved stability of C54-TiSi2 on (001)Si by the addition of N2 to Ar during Ti sputtering
    Chang, SM
    Cheng, SL
    Chen, LJ
    Luo, CH
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (04) : 1779 - 1783
  • [9] Suppression of the phase transition to C54 TiSi2 due to epitaxial growth of C49 TiSi2 on Si(001) substrates in silicidation process
    Komiya, Satoshi
    Tomita, Hirofumi
    Ikeda, Kazuto
    Horii, Yoshimasa
    Nakamura, Tomoji
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (1 A): : 242 - 246
  • [10] Epitaxial growth of C54 TiSi2 on Si(001) by self-aligned process
    Wang, LM
    Wu, ST
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (02): : 638 - 642