Study of C49-TiSi2 and C54-TiSi2 formation on doped polycrystalline silicon using in situ resistance measurements during annealing

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作者：
Clevenger, L.A.
Mann, R.W.
Roy, R.A.
Saenger, K.L.
Cabral, C. Jr.
Piccirillo, J.
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Journal of Applied Physics | 1994年 / 76卷 / 12期
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