High temperature characterization of GaN-based photodetectors

被引：0
|
作者：
机构：
[1] De Vittorio, M.
[2] Potí, B.
[3] Todaro, M.T.
[4] Frassanito, M.C.
[5] Pomarico, A.
[6] Passaseo, A.
[7] Lomascolo, M.
[8] Cingolani, R.
来源：
De Vittorio, M. (massimo.devittorio@unile.it) | 1600年 / Elsevier卷 / 113期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Photodetectors
引用
收藏
相关论文
共 50 条
  • [41] Low temperature epitaxial technology for GaN-based materials
    Yu, Jiadong
    Luo, Yi
    Wang, Lai
    Wang, Jian
    Hao, Zhibiao
    Sun, Changzheng
    Han, Yanjun
    Xiong, Bing
    Li, Hongtao
    CHINESE SCIENCE BULLETIN-CHINESE, 2023, 68 (14): : 1762 - 1776
  • [42] Room Temperature GaN-based Spin Polarized Emitters
    Melton, A. G.
    Kucukgok, B.
    Liu, Zhiqiang
    Dietz, N.
    Lu, N.
    Ferguson, I. T.
    QUANTUM SENSING AND NANOPHOTONIC DEVICES X, 2013, 8631
  • [43] Testing the Temperature Limits of GaN-Based HEMT Devices
    Maier, David
    Alomari, Mohammed
    Grandjean, Nicolas
    Carlin, Jean-Francois
    di Forte-Poisson, Marie-Antoinette
    Dua, Christian
    Chuvilin, Andrey
    Troadec, David
    Gaquiere, Christophe
    Kaiser, Ute
    Delage, Sylvain L.
    Kohn, Erhard
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2010, 10 (04) : 427 - 436
  • [44] Fully Integrated Digital GaN-Based LSK Demodulator for High-Temperature Applications
    Hassan, Ahmad
    Amer, Mostafa
    Savaria, Yvon
    Sawan, Mohamad
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2020, 67 (09) : 1579 - 1583
  • [45] Characterization of GaN-based HEMTs as Varactor Diode Devices
    Hamdoun, Abdelaziz
    Roy, Langis
    Himdi, Mohammed
    Lafond, Olivier
    2015 45TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2015, : 1268 - 1271
  • [46] Design, fabrication and characterization of GaN-based HFET's
    Eastman, LF
    Chu, K
    Burm, JW
    Schaff, WJ
    Murphy, M
    Weimann, N
    WOFE '97 - 1997 ADVANCED WORKSHOP ON FRONTIERS IN ELECTRONICS, PROCEEDINGS, 1996, : 3 - 6
  • [47] High temperature characteristics of GaN-based Heterojunction Bipolar Transistors and Bipolar Junction Transistors
    Cao, XA
    Van Hove, JM
    Klaassen, JJ
    Polley, CJ
    Wowchack, AM
    Chow, PP
    King, DJ
    Ren, F
    Dang, G
    Zhang, AP
    Abernathy, CR
    Pearton, SJ
    SOLID-STATE ELECTRONICS, 2000, 44 (04) : 649 - 654
  • [48] Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor
    Hongrui Lv
    Xianglong Shi
    Yujie Ai
    Zhe Liu
    Defeng Lin
    Lifang Jia
    Zhe Cheng
    Jie Yang
    Yun Zhang
    Journal of Semiconductors, 2022, 43 (11) : 81 - 86
  • [49] Characterization of GaN-based HEMTs as Varactor Diode Devices
    Hamdoun, Abdelaziz
    Roy, Langis
    Himdi, Mohammed
    Lafond, Olivier
    2015 10TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2015, : 417 - 420
  • [50] GaN-based LSK demodulators for wireless data receivers in high-temperature applications
    Hassan, Ahmad
    Ali, Mohamed
    Savaria, Yvon
    Sawan, Mohamad
    MICROELECTRONICS JOURNAL, 2019, 84 : 129 - 135
12345