Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor

被引：0

作者：

Hongrui Lv ^{[1
,2
]}

Xianglong Shi ^{[3
]}

Yujie Ai ^{[1
,2
]}

Zhe Liu ^{[1
]}

Defeng Lin ^{[1
,4
]}

Lifang Jia ^{[1
]}

Zhe Cheng ^{[1
]}

Jie Yang ^{[1
]}

Yun Zhang ^{[1
,2
]}

机构：

[1] Institute of Semiconductors, Chinese Academy of Sciences

[2] Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences

[3] Beijing Aerospace Micro-electronics Technology Co.

[4] Lishui Zhongke Semiconductor Material Co., Ltd.

来源：

Journal of Semiconductors | 2022年 / 43卷 / 11期

关键词：

D O I：

暂无

中图分类号：

TP212 [发送器（变换器）、传感器]; TN751.2 [谐振];

学科分类号：

080202 ;

摘要：

Surface acoustic wave(SAW) resonator with outstanding quality factors of 4829/6775 at the resonant/anti-resonant frequencies has been demonstrated on C-doped semi-insulating bulk GaN. The impact of device parameters including aspect ratio of length to width of resonators, number of interdigital transducers, and acoustic propagation direction on resonator performance have been studied. For the first time, we demonstrate wireless temperature sensing from 21.6 to 120 °C with a stable temperature coefficient of frequency of –24.3 ppm/°C on bulk GaN-based SAW resonators.

引用

页码：81 / 86

页数：6

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