Design, fabrication and characterization of GaN-based HFET's

被引：0
|
作者：
Eastman, LF
Chu, K
Burm, JW
Schaff, WJ
Murphy, M
Weimann, N
机构：
来源：
WOFE '97 - 1997 ADVANCED WORKSHOP ON FRONTIERS IN ELECTRONICS, PROCEEDINGS | 1996年
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暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：3 / 6
页数：4
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