4H-SiC MESFETs behavior after high dose irradiation

被引：0

作者：

Brisset, C. ^{[1
]}

Noblanc, O. ^{[1
]}

Picard, C. ^{[1
]}

Joffre, F. ^{[1
]}

Brylinski, C. ^{[1
]}

机构：

[1] CEA-Saclay, Gif-sur-Yvette, France

来源：

IEEE Transactions on Nuclear Science | 2000年 / 47卷 / 3 I期

关键词：

Conductive materials - Dosimetry - Irradiation - MESFET devices - Semiconductor device structures - Semiconductor junctions - Silicon carbide - Substrates;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This study investigates the response of two MESFET 4H-SiC structures to irradiation at very high total dose levels. It demonstrates that electrically active defects created or stimulated by irradiation change the component response. A MESFET with a semi-insulating substrate exhibits better dose response than one with a buffer layer between channel and conductive substrate.

引用

页码：598 / 603

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