High dose high temperature ion implantation of Ge into 4H-SiC

被引：2
|
作者：
Kups, Th.
Weih, P.
Voelskow, M.
Skorupa, W.
Pezoldt, J.
机构：
[1] Tech Univ Ilmenau, Zentrum Mikro & Nanotechnol, FG Mat Elektrotech, D-98684 Ilmenau, Germany
[2] Tech Univ Ilmenau, Zentrum Mikro & Nanotechnol, FG Nanotechnol, D-98684 Ilmenau, Germany
[3] Forschungzentrum Rossendorf, FWHIM, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany
来源：
Silicon Carbide and Related Materials 2005, Pts 1 and 2 | 2006年 / 527-529卷
关键词：
4H-SiC; Ge; solid solution; ion implantation; transmission electron microscopy;
D O I：
10.4028/www.scientific.net/MSF.527-529.851
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A box like Ge distribution was formed by ion implantation at 600 degrees C. The Ge concentration was varied from 1 to 20 %. The TEM investigations revealed an increasing damage formation with increasing implantation dose. No polytype inclusions were observed in the implanted regions. A detailed analysis showed different types of lattice distortion identified as insertion stacking faults. The lattice site location analysis by "atomic location by channelling enhanced microanalysis" revealed that the implanted Ge is mainly located at interstitial positions.
引用
收藏
页码：851 / 854
页数：4
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