Al and Al/C high dose implantation in 4H-SiC

被引：0
|
作者：
Bluet, J.M. [1 ]
Pernot, J. [2 ]
Billon, T. [1 ]
Contreras, S. [2 ]
Michaud, J.F. [1 ]
Robert, J.L. [2 ]
Camassel, J. [2 ]
机构：
[1] LETI-CEA Grenoble, Dept. de Microtechnologie, 17 rue des Martyrs, FR-38054 Grenoble Cedex 9, France
[2] Groupe d'Etude des Semiconducteurs, Université Montpellier 2-CNRS, cc074, Place E. Bataillon, FR-34095 Montpellier Cedex 5, France
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
Aluminum - Annealing - Carbon - Electric resistance - Hall effect - Ion implantation - Semiconducting silicon compounds - Semiconductor doping - Semiconductor junctions;
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摘要：
We report an electrical investigation of high dose Al and Al/C ion-implantation in 4H-SiC. We show that, using a reasonably high temperature annealing (1670 °C) for 10 minutes, low resistivity can be obtained. Our best result is approximately 95 mΩ.cm at 300 K. We also verify the electrical activation enhancement, already reported when using Al and C co-doping. The lowest specific resistance is approximately 2 mΩ.cm2 for a PN junction realized by Al implantation.
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