High Dose Al+ Implanted and Microwave Annealed 4H-SiC

被引：0
|
作者：
Nipoti, R. [1 ]
Nath, A. [2 ]
Rao, Mulpuri V. [2 ]
Hellen, A. [3 ]
Mancarella, F. [1 ]
Zampolli, S. [1 ]
Tian, Y. L. [4 ]
机构：
[1] CNR IMM Bologna, Via Gobetti 101, I-40129 Bologna, Italy
[2] George Mason Univ, Dept Elect & Comp Engn, Fairfax, VA 22030 USA
[3] Royal Inst Technol, ICT MAP, SE-16440 Kista, Sweden
[4] LT Technol, Fairfax, VA 22033 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷
关键词：
p-type doping; ion implantation; electrical activation; microwave annealing;
D O I：
10.4028/www.scientific.net/MSF.717-720.817
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A post implantation microwave annealing technique has been used for the electrical activation of Al+ implanted ions in semi-insulating 4H-SiC. The annealing temperatures have been 2000-2100 degrees C. The implanted Al concentration has been varied from 5 x 10(19) to 8 x cm(-3). A minimum resistivity of 2 x 10(-2) Omega.cm and about 70% electrical activation of the implanted Al has been measured at room temperature for an implanted Al concentration of 8 x 10(2) cm(-3) and a microwave annealing at 2100 degrees C for 30 s.
引用
收藏
页码：817 / +
页数：2
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