Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes

被引：0
|
作者：
Nath, A. [1 ]
Rao, Mulpuri V. [1 ]
Moscatelli, F. [2 ]
Puzzanghera, M. [2 ]
Mancarella, F. [2 ]
Nipoti, R. [2 ]
机构：
[1] George Mason Univ, Dept Elect & Comp Engn, 4400 Univ Dr, Fairfax, VA 22030 USA
[2] CNR IMM, UOS Bologna, I-40129 Bologna, Italy
来源：
2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014) | 2014年
关键词：
4H-SiC; p-i-n diode; ion-implantation; Arrhenius plot; recombination-generation centers; RECOMBINATION; SURFACE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work the temperature dependent current-voltage characteristics of microwave annealed 4H-SiC vertical p(+)-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.
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页数：4
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