4H-SiC high temperature spectrometers

被引：4
|
作者：
Kalinina, E.
Strokan, N. [1 ]
Ivanov, A. M. [1 ]
Sadohin, A. [1 ]
Azarov, A. [2 ]
Kossov, V. [2 ]
Yafaev, R. [2 ]
Lashaev, S. [3 ]
机构：
[1] RAS, Ioffe Inst, 26 Politekhn Skaya Str, St Petersburg 194021, Russia
[2] Electron Optron, St Petersburg 194223, Russia
[3] RAS, Khlopin Radium Inst, St Petersburg 194021, Russia
来源：
SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷
关键词：
radiation; defect; detector; energy resolution; diffusion length;
D O I：
10.4028/www.scientific.net/MSF.556-557.941
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The detector structures based on Al ion-implanted p(+)-n junctions in 4H-SiC have been manufactured and tested at temperatures up to 170 degrees C by a-particles with energies of 3.9 and 5.5 MeV. Structural peculiarities of thin Al high dose ion implanted layers before and after short high temperature activation annealing were studied by combination of Rutherford back scattering/channeling spectrometry and cross-sectional transmission electron microscopy. The detector structures fabricated on this thin ion implanted p(+)-n junctions operated in the temperature range of 16-170 degrees C with reproducible stable spectrometric characteristics. The charge collection efficiency and the energy resolution of detectors improved with rising temperature up to 170 degrees C, that was obtained in SiC detectors for the first time.
引用
收藏
页码：941 / +
页数：2
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