4H-SiC MESFETs behavior after high dose irradiation

被引：0

作者：

Brisset, C. ^{[1
]}

Noblanc, O. ^{[1
]}

Picard, C. ^{[1
]}

Joffre, F. ^{[1
]}

Brylinski, C. ^{[1
]}

机构：

[1] CEA-Saclay, Gif-sur-Yvette, France

来源：

IEEE Transactions on Nuclear Science | 2000年 / 47卷 / 3 I期

关键词：

Conductive materials - Dosimetry - Irradiation - MESFET devices - Semiconductor device structures - Semiconductor junctions - Silicon carbide - Substrates;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This study investigates the response of two MESFET 4H-SiC structures to irradiation at very high total dose levels. It demonstrates that electrically active defects created or stimulated by irradiation change the component response. A MESFET with a semi-insulating substrate exhibits better dose response than one with a buffer layer between channel and conductive substrate.

引用

页码：598 / 603

共 50 条

[41] Radiation source dependence of device performance degradation for 4H-SiC MESFETs
Ohyama, H.
Takakura, K.
Uemura, K.
Shigaki, K.
Kudou, T.
Matsumoto, T.
Arai, M.
Kuboyama, S.
Kamezawa, C.
Simoen, E.
Claeys, C.
SUPERLATTICES AND MICROSTRUCTURES, 2006, 40 (4-6) : 632 - 637
[42] Power density of the optimized dual-channel 4H-SiC MESFETs
Zhang, Xianjun
You, Na
2017 CHINESE AUTOMATION CONGRESS (CAC), 2017, : 1261 - 1264
[43] Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs
吕红亮
张义门
张玉明
车勇
Chinese Physics B, 2008, 17 (04) : 1410 - 1414
[44] Study of trapping phenomenon in 4H-SiC MESFETs: Dependence on substrate purity
Sghaier, N
Bluet, JM
Souifi, A
Guillot, G
Morvan, E
Brylinski, C
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (02) : 297 - 302
[45] Improved Performance of 4H-SiC MESFETs with Triple-recessed Structure
Jia, Hujun
Zhang, Hang
Xing, Ding
Ma, Peimiao
INTERNATIONAL CONFERENCE ON INFORMATION TECHNOLOGY AND INDUSTRIAL AUTOMATION (ICITIA 2015), 2015, : 86 - 90
[46] Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs
Lu Hong-Liang
Zhang Yi-Men
Zhang Yu-Ming
Che Yong
CHINESE PHYSICS B, 2008, 17 (04) : 1410 - 1414
[47] Nitrogen and phosphorus implanted MESFETs in semi-insulating 4H-SiC
Tucker, JB
Mitra, S
Papanicolaou, N
Siripuram, A
Rao, MV
Holland, OW
DIAMOND AND RELATED MATERIALS, 2002, 11 (3-6) : 392 - 395
[48] Fabrication of 4H-SiC planar MESFETs having low contact resistance
Na, HJ
Kim, HJ
Adachi, K
Kiritani, N
Tanimoto, S
Okushi, H
Arai, K
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1383 - 1386
[49] Transconductance frequency dispersion measurements on fully implanted 4H-SiC MESFETs
Mitra, S
Rao, MV
Jones, KA
SOLID-STATE ELECTRONICS, 2004, 48 (01) : 143 - 147
[50] Fabrication of 4H-SiC MESFETs on conducting substrates and analysis of their premature breakdown
Song, NJ
Kim, J
Choi, CK
Burm, J
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 44 (02) : 418 - 422

← 1 2 3 4 5 →