TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy

被引：0
|
作者：
Peide, Han [1 ]
机构：
[1] Lab. of Semiconduct. Mat. Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China
来源：
Diffusion and Defect Data. Pt A Defect and Diffusion Forum | 1999年 / 173卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：59 / 66
相关论文
共 50 条
  • [41] Growth and structural properties of rocksalt MnSe/GaAs epilayer by hot-wall epitaxy
    Yu, YM
    Kim, DJ
    Eom, SH
    Choi, YD
    Yoon, MY
    Choi, IH
    JOURNAL OF CRYSTAL GROWTH, 2005, 279 (1-2) : 70 - 75
  • [42] GROWTH OF CDTE ON GAAS BY HOT-WALL EPITAXY AND ITS STRESS-RELAXATION
    TATSUOKA, H
    KUWABARA, H
    FUJIYASU, H
    NAKANISHI, Y
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (05) : 2073 - 2075
  • [43] GROWTH AND CHARACTERIZATION OF PBTE EPITAXIAL-FILMS GROWN BY HOT-WALL EPITAXY
    CLEMENS, H
    FANTNER, EJ
    RUHS, W
    BAUER, G
    JOURNAL OF CRYSTAL GROWTH, 1984, 66 (02) : 251 - 256
  • [44] CHARACTERIZATION OF EPITAXIAL-FILMS OF CDTE AND CDS GROWN BY HOT-WALL EPITAXY
    SITTER, H
    HUMENBERGER, J
    HUBER, W
    LOPEZOTERO, A
    SOLAR ENERGY MATERIALS, 1983, 9 (02): : 199 - 206
  • [45] Structural characterization of epitaxial ferromagnetic MnSb layers grown by hot-wall epitaxy
    Tatsuoka, H
    Kuwabara, H
    Oshita, M
    Nakanishi, Y
    Nakamura, T
    Fujiyasu, H
    APPLIED SURFACE SCIENCE, 1996, 92 : 382 - 386
  • [46] Substrate dependence of the photoluminescence from ZnS epilayers grown by hot-wall epitaxy
    Nam, S
    Rhee, J
    Yu, YM
    O, BS
    Lee, KS
    Choi, YD
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S406 - S409
  • [47] Growth and evaluation of high-quality ZnTe/GaAs by hot wall epitaxy
    Kim, BJ
    Wang, JF
    Ishikawa, Y
    Sato, S
    Isshiki, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 191 (01): : 161 - 168
  • [48] TEM study of stacking faults and misfit dislocations in ZnSe/GaAs epilayers grown by molecular beam epitaxy
    Fung, KK
    Wang, N
    Sou, IK
    JOURNAL OF TRACE AND MICROPROBE TECHNIQUES, 1997, 15 (04): : 527 - 531
  • [49] The characterization of ZnSe/GaAs epilayers grown by hot wall epitaxy
    Jeong, TS
    Yu, PY
    Shin, YJ
    Youn, CJ
    Shin, HK
    Kim, TS
    Lee, H
    Lee, TS
    Hong, KJ
    JOURNAL OF CRYSTAL GROWTH, 1997, 172 (1-2) : 89 - 96
  • [50] GROWTH OF GAN FILMS BY HOT-WALL EPITAXY
    ISHIDA, A
    YAMAMOTO, E
    ISHINO, K
    ITO, K
    FUJIYASU, H
    NAKANISHI, Y
    APPLIED PHYSICS LETTERS, 1995, 67 (05) : 665 - 666
12345