TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy

被引：0
|
作者：
Peide, Han [1 ]
机构：
[1] Lab. of Semiconduct. Mat. Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China
来源：
Diffusion and Defect Data. Pt A Defect and Diffusion Forum | 1999年 / 173卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：59 / 66
相关论文
共 50 条
  • [21] LOW-TEMPERATURE PHOTOLUMINESCENCE FROM CDTE GROWN BY HOT-WALL EPITAXY ON GAAS
    LISCHKA, K
    SCHMIDT, T
    PESEK, A
    SITTER, H
    APPLIED PHYSICS LETTERS, 1989, 55 (12) : 1220 - 1222
  • [22] Characterization and growth of high quality ZnTe epilayers by hot-wall epitaxy
    Nam, S
    Rhee, J
    O, BS
    Lee, KS
    Choi, YD
    Jeon, GN
    Lee, CH
    JOURNAL OF CRYSTAL GROWTH, 1997, 180 (01) : 47 - 53
  • [23] CHARACTERIZATION OF HOT WALL EPITAXY GROWN ZNTE LAYERS
    LINK, P
    SCHMIDT, T
    BAUER, S
    WAGNER, HP
    LEIDERER, H
    GEBHARDT, W
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (08) : 3730 - 3734
  • [24] Characterization and growth of high quality ZnTe epilayers by hot-wall epitaxy
    Chungnam Natl Univ, Taejon, Korea, Republic of
    J Cryst Growth, 1 (47-53):
  • [25] CDTE (111)B GROWTH ON ORIENTED AND MISORIENTED GAAS(100) GROWN BY HOT-WALL EPITAXY
    TATSUOKA, H
    KUWABARA, H
    NAKANISHI, Y
    FUJIYASU, H
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (09) : 4592 - 4597
  • [26] STRAIN RELAXATION OF CDTE(100) LAYERS GROWN BY HOT-WALL EPITAXY ON GAAS(100) SUBSTRATES
    TATSUOKA, H
    KUWABARA, H
    NAKANISHI, Y
    FUJIYASU, H
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (11) : 6860 - 6864
  • [27] EPITAXIAL-GROWTH OF CDTE ON GAAS BY HOT-WALL EPITAXY
    SHIN, YJ
    JEONG, TS
    SHIN, HK
    KIM, TS
    LEE, H
    KANG, SK
    LEE, TS
    HONG, KJ
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1995, 28 : S140 - S144
  • [28] TEM ANALYSIS OF LEAD-TELLURIDE FILMS GROWN BY HOT-WALL EPITAXY ON KCL AND BAF2
    PONGRATZ, P
    SITTER, H
    JOURNAL OF CRYSTAL GROWTH, 1987, 80 (01) : 73 - 78
  • [29] COMPARATIVE OPTICAL INVESTIGATIONS OF ZNSE GAAS EPILAYERS GROWN BY MOLECULAR-BEAM AND HOT-WALL EPITAXY
    KUDLEK, G
    PRESSER, N
    GUTOWSKI, J
    HINGERL, K
    SITTER, H
    DURBIN, SM
    MENKE, DR
    KOBAYASHI, M
    GUNSHOR, RL
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) : 5630 - 5635
  • [30] SCATTERING SPECTROSCOPIC STUDIES ON OPTICAL PHONONS OF ZNSE FILM GROWN ON (100) GAAS BY HOT-WALL EPITAXY
    LAO, PD
    WANG, J
    YAO, WH
    ZHENG, SD
    CHINESE PHYSICS, 1992, 12 (01): : 193 - 198
12345