TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy

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作者：
Peide, Han [1 ]
机构：
[1] Lab. of Semiconduct. Mat. Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China
来源：
Diffusion and Defect Data. Pt A Defect and Diffusion Forum | 1999年 / 173卷
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页码：59 / 66
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