共 50 条
- [31] Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam 2014 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT), 2014, : 73 - 77
- [32] DEFECTS INTRODUCED BY AR PLASMA EXPOSURE IN GAAS PROBED BY MONOENERGETIC POSITRON BEAM JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (10A): : L1374 - L1377
- [33] Oxygen-related defects in low-dose separation-by-implanted oxygen wafers probed by monoenergetic positron beams 1600, American Institute of Physics Inc. (90):
- [37] Vacancy-type defects in strained-Si layers deposited on SiGeSi structures probed by using monoenergetic positron beams Uedono, A. (uedono@ims.tsukuba.ac.jp), 1600, American Institute of Physics Inc. (97):
- [39] Defects in SiO2/Si structures probed by using a monoenergetic positron beam 1600, JJAP, Minato-ku, Japan (33):
- [40] Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS, 2004, 445-6 : 201 - 203