共 50 条
- [3] Oxygen-related defects in silicon-on-insulator wafers probed monoenergetic positron beams 2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2002, : 196 - 197
- [4] DEFECTS IN SEPARATION BY IMPLANTED OXYGEN WAFER PROBED BY MONOENERGETIC POSITRON BEAMS HYPERFINE INTERACTIONS, 1993, 79 (1-4): : 621 - 625
- [5] CHARACTERIZATION OF SEPARATION-BY-IMPLANTED-OXYGEN WAFERS WITH MONOENERGETIC POSITRON BEAMS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9A): : 3682 - 3686
- [7] Oxygen-related defects introduced by As+-implantation through cap layers in Si probed by monoenergetic positron beams JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (11): : 6126 - 6129
- [8] Annealing effect on structural defects in low-dose separation-by-implanted-oxygen wafers JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (10A): : 7592 - 7599
- [10] Oxygen-related defects in O+-implanted 6H-SiC studied by a monoenergetic positron beam J Appl Phys, 1600, 10 (5392-5398):